View BLF244_290714.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF244 VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Low noise figure * Easy power control * Good thermal stability * Withstands full load mismatch * Gold metallization ensures excellent reliability.
g d
k, halfpage
BLF244
PIN CONFIGURATION
1
4
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION
2 3
MSB057
MBB072
s
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 15 Gp (dB) > 13 D (%) > 50
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF244
MAX. 65 20 3 38 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 38 W Tmb = 25 C; Ptot = 38 W THERMAL RESISTANCE 4.6 K/W 0.3 K/W
handbook, halfpage
10
MRA919
handbook, halfpage
50
MGP151
Ptot
ID (A)
(W) 40
(1)
(1) 1
30 (2)
(2)
20
10
10-1
1
10
VDS (V)
102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs F PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched devices forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance noise figure (see Fig. 13) CONDITIONS VGS = 0; ID = 5 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 5 mA; VDS = 10 V ID = 5 mA; VDS = 10 V ID = 0.75 A; VDS = 10 V ID = 0.75 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz ID = 0.5 A; VDS = 28 V; R1 = 23 ; Th = 25 C; f = 175 MHz; Rth mb-h = 0.3 K/W MIN. 65 - - 2 - 0.6 - - - - - - TYP. - - - - - - 0.8 5 60 40 4.5 4.3
BLF244
MAX. UNIT - 1 1 4.5 100 - 1.5 - - - - - V mA A V mV S A pF pF pF dB
MGP152
handbook, halfpage
2
handbook, halfpage
6
MGP153
T.C. (mV/K) 0
ID (A) 4
-2
-4 2 -6
-8 1 10
0 102 ID (mA) 103 0 4 8 12 VGS (V) 16
VDS = 10 V; valid for Tj = 25 to 125 C.
VDS = 10 V. solid line: Tj = 25 C. dotted line: Tj = 125 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
handbook, halfpage
2
MGP154
handbook, halfpage
160
MGP155
RDS(on) ()
C (pF) 120
1
80 Cis Cos 40
0 0 40 80 120 Tj (C) 160
0 0 10 20 30 VDS (V) 40
VGS = 10 V; ID = 0.75 A.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
20
MGP156
Crs (pF)
10
0 0 20 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 3 K/W; unless otherwise specified. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 175 175 Note 1. R1 included. Ruggedness in class-B operation The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: Th = 25 C; Rth mb-h = 0.3 K/W; at rated load power. VDS (V) 28 12.5 IDQ PL (mA) (W) 25 25 15 6 GP (dB) > 13 typ. 17 typ. 15 D (%) > 50 typ. 65 typ. 60 Zi () (note 1) 3.0 - j4.0 3.0 - j4.0 ZL () 6.3 + j9.8 4.5 + j3.3
BLF244
R1 () 46.4//46.4 100
handbook, halfpage
30
MGP157
handbook, halfpage
20
MGP158
Gp
100
PL (W)
Gp (dB) D
D (%)
20
10
50
10 0 1 PIN (W) 2
0 0 10 20 PL (W)
0 30
Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.9
Load power as a function of input power, typical values.
Fig.10 Power gain and efficiency as functions of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
handbook, halfpage
20
MGP159
handbook, halfpage
20
MGP160
100 D (%)
Gp (dB) PL (W) 16 Gp
80
10
12
D
60
8
40
0 0 1 PIN (W) 2
4 0 4 8 12 PL (W)
20 16
Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.11 Load power as a function of input power, typical values.
Fig.12 Power gain and efficiency as functions of load power, typical values.
handbook, full pagewidth
+VG R2 C6
R3
C14 C7
L6
+VD C13
L5 C2 50 input C1 L1 C5 L2 R1 L3 D.U.T. L4 L7
C8 L8
C11 C12
50 output
C9 C3 C4
C10
MGP161
f = 175 MHz.
Fig.13 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C12 C2 C3, C4, C9 C5 C6 C7 C8 C10, C11 C13 C14 L1 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) solid tantalum capacitor multilayer ceramic chip capacitor VALUE 680 nF 20 pF 5 to 60 pF 75 pF 10 nF 100 pF 47 pF 11 pF 2.2 F 100 nF length 6.3 mm int. dia. 3 mm leads 2 x 5 mm int. dia. 5.6 mm leads 2 x 5 mm 15 x 6 mm length 10.4 mm int. dia. 6 mm leads 2 x 5 mm DIMENSIONS
BLF244
CATALOGUE NO.
2222 809 08003
2222 852 47103
2222 852 47104
4 turns enamelled 1 mm copper wire 32 nH
L2 L3, L4 L5
1 turn enamelled 1 mm copper wire stripline (note 2)
12.2 nH 30
6 turns enamelled 1 mm copper wire 119 nH
L6 L7
grade 3B Ferroxcube RF choke 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm int. dia. 3 mm leads 2 x 5 mm length 8.5 mm int. dia. 3 mm leads 2 x 5 mm
4312 020 36640
L8
4 turns enamelled 1 mm copper wire 28.5 nH
R1 R2 R3 Notes
metal film resistor (note 3) 0.4 W metal film resistor 0.4 W metal film resistor 1 M 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (r = 4.5), thickness 116 inch. 3. Refer to Application Information for value.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
150
handbook, full pagewidth
strap
rivet 70
strap
L6 +VD C13 C6 R1 L3 L4 C10 C3 C4 C9 L5 R3 L7 C8 L8 C11 C12
R2 +VG C2 C1 L1 C5 L2
C7 C14
MGP162
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and hollow rivets under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF244
handbook, halfpage
60
MGP164
MGP165
handbook, halfpage
25
Zi () 40
ZL () 20
RL
15 xi 10 20 XL 5 ri 0 20 40 60 80 100 120 f (MHz) 0 20 40 60 80 100 120 f (MHz)
Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.15 Input impedance as a function of frequency (series components), typical values.
Fig.16 Load impedance as a function of frequency (series components), typical values.
MGP166
handbook, halfpage
40
Gp (dB) 36
32
28
24
20 20
40
60
80
100 120 f (MHz)
Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.17 Power gain as function of frequency, typical values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF244
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF244
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

▲Up To Search▲

Price & Availability of BLF244

	To Download BLF244 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .